IGBT, FGAF40N60SMD
IGBTs
EGP 394.67/Each(In a Pack of 2)
(ex VAT)
EGP 453.87/Each(In a Pack of 2)
(inc VAT)
| Stock No. | 8070763 |
|---|---|
| Manufacturer | ON Semiconductor |
| Part No. | FGAF40N60SMD |
| Supplied/Stocked By | RS Components Ltd. |
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.| Mounting Type | Through Hole |
|---|---|
| Maximum Continuous Collector Current | 80 A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 115 W |
| Maximum Operating Temperature | +175 °C |
| Maximum Collector Emitter Voltage | 600 V |
| Switching Speed | 1MHz |
| Minimum Operating Temperature | -55 °C |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.7 x 3.2 x 26.7mm |
| Package Type | TO-3PF |
Technical Documents
Parts List
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