IRLML2803
MOSFETs
EGP 27.63/Each(In a Pack of 5)
(ex VAT)
EGP 31.77/Each(In a Pack of 5)
(inc VAT)
| Stock No. | 0302022 |
|---|---|
| Manufacturer | Infineon |
| Part No. | IRLML2803TRPBF |
| Supplied/Stocked By | RS Components Ltd. |
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.| Transistor Material | Si |
|---|---|
| Maximum Drain Source Voltage | 30 V |
| Maximum Operating Temperature | +150 °C |
| Pin Count | 3 |
| Channel Mode | Enhancement |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Series | HEXFET |
| Maximum Gate Threshold Voltage | 1V |
| Transistor Configuration | Single |
| Height | 1.02mm |
| Maximum Continuous Drain Current | 1.2 A |
| Package Type | SOT-23 |
| Maximum Power Dissipation | 540 mW |
| Width | 1.4mm |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 3.3 nC @ 10 V |
| Maximum Drain Source Resistance | 250 mΩ |
| Length | 3.04mm |
Technical Documents
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