IC,IPB200N25N3G
MOSFETs
EGP 309.55/Each(In a Pack of 1000)
(ex VAT)
EGP 355.98/Each(In a Pack of 1000)
(inc VAT)
| Stock No. | 1658068 |
|---|---|
| Manufacturer | Infineon |
| Part No. | IPB200N25N3 G |
| Origin | CHINA |
| Supplied/Stocked By | RS Components Ltd. |
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.| Maximum Operating Temperature | +175 °C |
|---|---|
| Maximum Drain Source Voltage | 250 V |
| Pin Count | 3 |
| Package Type | D2PAK (TO-263) |
| Minimum Operating Temperature | -55 °C |
| Number of Elements per Chip | 1 |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Continuous Drain Current | 64 A |
| Series | OptiMOS 3 |
| Transistor Configuration | Single |
| Forward Diode Voltage | 1.2V |
| Typical Gate Charge @ Vgs | 64 nC @ 10 V |
| Channel Mode | Enhancement |
| Mounting Type | Surface Mount |
| Length | 10.31mm |
| Maximum Drain Source Resistance | 20 mΩ |
| Height | 4.57mm |
| Transistor Material | Si |
| Maximum Power Dissipation | 300 W |
| Channel Type | N |
| Width | 9.45mm |
Parts List
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